메인메뉴바로가기

한양대학교 산학협력단

홈으로 바로가기 > 연구정보 > 연구성과 > Recent Articles

연구성과 > Recent Articles

  • 한양대학교 기관으로 출판된 최신 SCI급 논문현황 (Web Of Science에서 제공되는 자료)
  • 매주 1회 업데이트
페이스북 로그인트위터 로그인카카오톡 로그인메일 전송
view

SCI-E Article

STT-MRAM Read-circuit with Improved Offset Cancellation
Author Lee, Dong-Gi (Dept Elect & Comp Engn); 박상규 (Dept Elect & Comp Engn);
Corresponding Author Info Park, SG (reprint author), Hanyang Univ, Dept Elect & Comp Engn, 222 Wangsimni Ro, Seoul 133791, South Korea.
E-mail 씠硫붿씪 븘씠肄sanggyu@hanyang.ac.kr
Document Type Article
Source JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Volume:17 Issue:3 Pages:347-353 Published:2017
Times Cited 0
External Information PDF 븘씠肄http://dx.doi.org/10.5573/JSTS.2017.17.3.347
Abstract We present a STT-MRAM read-circuit which mitigates the performance degradation caused by offsets from device mismatches. In the circuit, a single current source supplies read-current to both the data and the reference cells sequentially eliminating potential mismatches. Furthermore, an offset-free pre-amplification using a capacitor storing the mismatch information is employed to lessen the effect of the comparator offset. The proposed circuit was implemented using a 130-nm CMOS technology and Monte Carlo simulations of the circuit demonstrate its effectiveness in suppressing the effect of device mismatch.
Web of Science Categories Engineering, Electrical & Electronic; Physics, Applied
Funding IDEC, Korea
Language English
페이스북 로그인트위터 로그인카카오톡 로그인메일 전송 리스트