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  • 한양대학교 기관으로 출판된 최신 SCI급 논문현황 (Web Of Science에서 제공되는 자료)
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SCI Article

Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carr
Author Han, Dong-Pyo (Dept Elect & Commun Engn); Shim, Jong-In (Dept Elect & Commun Engn); Shin, Dong-Soo (Dept Appl Phys); 신동수 (Dept Bionanotechnol) corresponding author;
Corresponding Author Info Shin, DS (reprint author), Hanyang Univ, Dept Appl Phys, ERICA Campus, Ansan 426791, Gyeonggi, South Korea.; Shin, DS (reprint author), Hanyang Univ, Dept Bionanotechnol, ERICA Campus, Ansan 426791, Gyeonggi, South Korea.
E-mail dshin@hanyang.ac.kr
Document Type Article
Source APPLIED PHYSICS EXPRESS Volume:10 Issue:5 Pages:- Published:2017
Times Cited 0
External Information http://dx.doi.org/10.7567/APEX.10.052101
Abstract In this work, we investigate the carrier recombination dynamics in InGaN-based blue LED devices by analyzing the radiative and nonradiative carrier lifetimes as functions of driving current. To separate the radiative and nonradiative carrier lifetimes, we utilize the information on the internal quantum efficiency (IQE) and differential carrier lifetime. For comparative analysis, the characteristics of the IQE and electroluminescence spectrum are also used. Through measurements and analyses, we demonstrate that the saturation of the radiative recombination rate induced by the phase-space filling in the active volume triggers the increase in nonradiative recombination rate, thus leading to the efficiency droop. (C) 2017 The Japan Society of Applied Physics
Web of Science Categories Physics, Applied
Funding
Language English
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